Samsung Electronics Extreme Low Voltage 30nm SODIMM 2 Not a kit 2 GB DRAM (MV3T2G3US)
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Samsung Electronics Extreme Low Voltage 30nm SODIMM 2 Not a kit 2 GB DRAM (MV3T2G3US)

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  • Technology: DRAM
  • Capacity: 2 GB
  • ECC / Registered: Registered Non-ECC Unbuffered
  • Bus Clock: 600 MHz
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Samsung Electronics Extreme Low Voltage 30nm SODIMM 2 Not a kit 2 GB...

Boost performance with Samsung genuine PC memory. As the #1 memory supplier in the world, Samsung DRAM modules are made with 100% Samsung components. With the 30nm-Class DDR3 1600MHz Extreme Low Voltage SODIMM module from Samsung, you can get faster speed and greater reliability from your computer while consuming less energy. Use Samsung SODIMM DDR3 memory to replace or increase the memory in your laptop. This Samsung DDR3 memory module employs 30-nanometer technology and, as a result, uses up to 65 percent less power and is only two-thirds the size of conventional 60-nanometer memory modules. This version of Samsung DDR3 has a 2 GB capacity.

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Product Details and Features

Product MPN
MPN MV3T2G3US

Key Features
Technology DRAM
Capacity 2 GB
ECC / Registered Registered Non-ECC Unbuffered
Bus Clock 600 MHz

Miscellaneous
UPC 36725604230
Product ID 110219145

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